APTM100H40FT3G APTM100H40FT3G ? rev 0 june, 2009 www.microsemi.com 1 ? 5 11 q4 14 13 23 q2 10 8 7 3 4 22 29 31 r1 15 16 32 26 19 18 q1 q3 27 30 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? absolute maximum ratings these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdo wn voltage 1000 v t c = 25c 21 i d continuous drain current t c = 80c 16 i dm pulsed drain current 140 a v gs gate - source voltage 30 v r dson drain - source on resistance 480 m p d maximum power dissipation t c = 25c 390 w i ar avalanche current (repetitive and non repetitive) 18 a application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? power mos 8? fast fredfets - low r dson - low input and miller capacitance - low gate charge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? very low stray inductance - symmetrical design ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge m osfet power module v dss = 1000v r dson = 400m typ @ tj = 25c i d = 21a @ tc = 25c
APTM100H40FT3G APTM100H40FT3G ? rev 0 june, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i dss zero gate voltage drain current v ds = 1000v v gs = 0v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 18a 400 480 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 4 5 v i gss gate ? source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7868 c oss output capacitance 825 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 104 pf q g total gate charge 305 q gs gate ? source charge 55 q gd gate ? drain charge v gs = 10v v bus = 500v i d = 18a 145 nc t d(on) turn-on delay time 44 t r rise time 40 t d(off) turn-off delay time 150 t f fall time resistive switching @ 25c v gs = 15v v bus = 667v i d = 18a r g = 2.2 38 ns source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 21 i s continuous source current (body diode) tc = 80c 16 a v sd diode forward voltage v gs = 0v, i s = - 18a 1.1 v dv/dt peak diode recovery x 25 v/ns t j = 25c 300 t rr reverse recovery time t j = 125c 650 ns t j = 25c 1.61 q rr reverse recovery charge i s = - 18a v r = 100v di s /dt = 100a/s t j = 125c 4.21 c x dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 16a di/dt 1000a/s v dd 667v t j 125c
APTM100H40FT3G APTM100H40FT3G ? rev 0 june, 2009 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.32 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTM100H40FT3G APTM100H40FT3G ? rev 0 june, 2009 www.microsemi.com 4 ? 5 typical performance curve low voltage output characteristics t j =25c t j =125c 0 10 20 30 40 50 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) v gs =10v low voltage output characteristics 4.5v 5v 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) t j =125c v gs =6, 7, 8 &9v normalized rdson vs. temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 t j , junction temperature (c) r dson , drain to source on resistance v gs =10v i d =18a transfert characteristics t j =25c t j =125c 0 5 10 15 20 25 30 35 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d(on) xr ds(on) max 250s pulse test @ < 0.5 duty cycle ciss crss coss 1 10 100 1000 10000 100000 0 50 100 150 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage gate charge vs gate to source v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 0 40 80 120 160 200 240 280 320 gate charge (nc) v gs , gate to source voltage v gs =10v i d =18a
APTM100H40FT3G APTM100H40FT3G ? rev 0 june, 2009 www.microsemi.com 5 ? 5 t j =25c t j =125c 0 10 20 30 40 50 0 0.3 0.6 0.9 1.2 v sd , source to drain voltage (v) i sd , reverse drain current (a) drain current vs source to drain voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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